| PART |
Description |
Maker |
| FDPF14N30T |
N-Channel UniFET MOSFET 300 V, 14 A, 290 m
|
Fairchild Semiconductor
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| FQB14N30 FQI14N30 FQB14N30TM |
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
300V N-Channel QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| APT30M70SVRG APT30M70BVRG |
Power MOSFET; Package: D3 [S]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
|
| FQB9N30 FQI9N30 |
300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOSFET) 9 A, 300 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQP3N30 |
300V N-Channel MOSFET 3.2 A, 300 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2N7002CK |
60 V, 0.3 A N-channel Trench MOSFET 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| RFP8P06LE RFD8P06LESM RFD8P06LE FN4273 |
8A/ 60V/ 0.300 Ohm/ ESD Rated/ Logic Level/ P-Channel Power MOSFET
From old datasheet system
8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，额定静电释放P沟道功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
| RJU003N03T106 |
2.5V Drive Nch MOSFET
300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Rohm
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 2N7002K-T1 |
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
|
VISHAY SILICONIX
|
|
